Business·Industry

Samsung’s HBM4 Sales Surpass $1 Billion for the First Time… Company Sets Out to Expand Market Share

NVIDIA's 'Verarubin' to Feature HBM4 Samsung Expands Market Share Following HBM4 Launch Samsung Ships HBM4E Samples… Demonstrates Leadership

[Edaily Reporter SOYEON KIM ] SamsungElectronics’ sixth-generation High Bandwidth Memory (HBM4)—the world’s first mass-produced HBM4—has become the first in the industry to surpass $1 billion (approximately 1.538 trillion won) in sales.

According to industry sources on the 23rd, SamsungElectronics achieved this milestone—surpassing $1 billion in sales—in just over 130 days since it became the first in the world to begin mass-producing and shipping HBM4 on February 12. Cumulative sales are expected to exceed $1.2 billion by the end of June.

SamsungElectronics’ HBM4 utilizes the company’s 10-nanometer-class 6th-generation (1c) DRAM process on the core die. The base die utilizes a 4-nanometer logic process, combining the company’s memory and foundry technology capabilities. SamsungElectronics’ HBM4 lineup is based on a 12-layer stack structure and offers capacities ranging from 24GB to 36GB; the company plans to adopt 16-layer stacking technology in the future to meet growing demand for higher memory capacity.
A photo of the HBM4 product, the world’s first to be mass-produced and shipped by SamsungElectronics. (Photo: SamsungElectronics)

SamsungElectronics’ HBM4 features a 2,048-pin I/O interface—twice the number of the 1,024 data I/O pins used in the previous 5th-generation HBM3E. SamsungElectronics’ HBM4 achieves a stable operating speed of 11.7 gigabits per second (Gbps). It can reach a maximum speed of 13 Gbps.

Based on this, SamsungElectronics has achieved a memory bandwidth of up to 3.3 terabytes (TB) per second per single stack. This represents an approximately 2.7-fold improvement over HBM3E. This speed is fast enough to transfer 750 movie files, each with a capacity of 4 gigabytes (GB), in just one second. This performance is designed to effectively meet the massive data processing demands required during the training and inference processes of large-scale artificial intelligence (AI) models.

In particular, HBM4 will be integrated into NVIDIA’s next-generation AI accelerator, “Verarubin,” set to launch in the second half of the year. Following Grace Blackwell, NVIDIA plans to begin production of Verarubin, its next-generation AI accelerator, in the second half of this year. With supply expected to increase rapidly immediately after the launch of HBM4, industry observers predict that SamsungElectronics’ market share in the HBM sector will also expand rapidly.

Given that NVIDIA CEO Jensen Huang, who recently visited South Korea, also emphasized the need for greater HBM supply in the future, HBM demand is expected to continue growing. Regarding the future outlook for HBM, CEO Huang stated, “We will be using HBM on a massive scale,” adding, “We will continue to collaborate with our Korean partners to secure the largest possible supply in a stable manner.”

SamsungElectronics also shipped the world’s first samples of its 7th-generation high-bandwidth memory (HBM4E) at the end of last month. By commencing supply of the next-generation HBM4E, the company is once again demonstrating its technological leadership in the AI memory market.

A photo introducing SamsungElectronics’ 6th-generation High Bandwidth Memory (HBM4). (Photo courtesy of SamsungElectronics)

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