[Edaily Reporter Choi Oh-hyun ] SK hynix plans to apply High-NA EUV (extreme ultraviolet), a next-generation lithography technology, to its DRAM mass production process by 2028. The company is also considering joining the “Large Mask Consortium”—led by global lithography equipment manufacturer ASML and Taiwan’s TSMC—to accelerate its efforts to secure next-generation fine-process technology.

According to Reuters on the 8th, SK hynix stated in a press release that it aims to apply High-NA EUV—next-generation advanced lithography equipment—to DRAM mass production by 2028. The company also added that it is considering joining a consortium related to the adoption of 12-inch photomasks.

High-NA EUV is a next-generation lithography technology that improves resolution by applying a higher numerical aperture (NA) than conventional EUV. While the NA of existing EUV equipment is 0.33, High-NA EUV has a higher NA of 0.55, enabling the creation of even finer circuit patterns. As circuits in next-generation semiconductors become increasingly refined, this technology is regarded as key to taking product performance and productivity to the next level.

Since first introducing EUV for the mass production of 10-nanometer-class 4th-generation (1a) DRAM in 2021, SK hynix has expanded its application to advanced DRAM. As DRAM miniaturization progresses further, the limitations of conventional EUV alone in realizing fine circuit patterns are becoming more pronounced; therefore, the company plans to utilize High-NA EUV to reduce process complexity and accelerate the development of next-generation memory.

SK hynix is also considering joining a consortium aiming to shift the industry standard to 12-inch photomasks. Global companies such as ASML are currently operating a working group to transition from the 6-inch photomasks traditionally used in the lithography process to 12-inch ones. SamsungElectronics is also participating in this initiative.

If the same 6-inch photomasks were used, High-NA EUV would allow for finer patterning, but the area that can be exposed in a single pass would be smaller than with conventional EUV, which could lead to lower productivity when manufacturing large chips. Accordingly, the consortium is pursuing a plan to increase the mask size to 12 inches to boost productivity and reduce manufacturing costs. The participating companies plan to collaborate on the development of 12-inch photomasks, the acquisition of equipment and materials technologies, and the establishment of relevant standards.