[Edaily Reporter Shin Ha-yeon] Mixed-signal semiconductor fabless company #IronDevice is participating in a government-funded project to develop next-generation power semiconductor technology for electric vehicles and is set to target the GaN (gallium nitride)-based power module market.

Iron Device announced on the 16th that it has been selected as a joint research and development partner for the government-funded project titled "Development of Power Module Technology with Built-in Drive Circuits for Electric Vehicles."

This project is being conducted as a consortium led by Semipowerレックス, with participation from the Korea Automotive Technology Institute, the Korea Electronics Technology Institute (KETI), and the industry-academic cooperation foundations of Seoul National University and Hanyang University. The total project budget is 8.34 billion won, and the R&D period is approximately 45 months, running until the end of 2029.

The goal of the project is to develop a "Full-Bridge 650V GaN Module with Integrated Drive Circuit." IronDevice is responsible for developing the "2.5kV Dual-Channel Isolated GaN Gate Driver," a core component of the module.

The company plans to develop an isolated gate driver equipped with a gate drive circuit optimized for high-speed switching and overcurrent detection capabilities. It aims to ensure high reliability and efficiency by applying galvanic isolation technology supporting 5A and 7A drive currents, as well as package technology with a breakdown voltage of 2.5kV or higher.

IronDevice plans to apply the technology secured through this project to the electric vehicle on-board charger (OBC) and fast-charging infrastructure markets, while also expanding its business scope into high-efficiency power supplies for data centers, DC/DC converters, and inverters for solar power and energy storage systems (ESS).

With the recent expansion of the electric vehicle and AI data center markets, demand for GaN power semiconductors—which offer higher power efficiency and are more conducive to miniaturization compared to conventional silicon (Si)—is rapidly increasing. As competition among global semiconductor companies to develop GaN-based power solutions intensifies, the industry expects IronDevice to strengthen its technological competitiveness in the next-generation power semiconductor market by leveraging this government-funded project.

Lee Young-sik, Executive Director at Iron Device, stated, “This is significant because it allows us to internalize GaN-based Intelligent Power Modules (IPMs), which were previously highly dependent on foreign technology, using domestic technology.” He added, “With IPM technology that integrates gate drivers and protection circuits into a single package, we will be able to reduce design complexity for our customers and shorten product development cycles.”